Nanometer-scale dielectric constant of Ge quantum dots using apertureless near-field scanning optical microscopy

Applied Physics Letters

Volumn 96, Issue 6, 2010, Pages

  Ogawa, Y ^a   Minami, F ^a   Abate, Yohannes ^b   Leone, Stephen R ^b  

^a Tokyo Institute of Technology ^*  (Japan)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC CONSTANTS; GE QUANTUM DOT; INCIDENT LIGHT; NANO-METER-SCALE; NEAR-FIELD SCATTERING; SCATTERING INTENSITY; SI SUBSTRATES; SPATIAL RESOLUTION;

DIELECTRIC MATERIALS; GERMANIUM; PERMITTIVITY; SEMICONDUCTOR QUANTUM DOTS;

NEAR FIELD SCANNING OPTICAL MICROSCOPY;

EID: 76749120584     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3309692     Document Type: Article

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