Frequency dependence of polarization hysteresis loop in CaBi 4Ti4O14 ferroelectric thin films

Integrated Ferroelectrics

Volumn 61, Issue , 2004, Pages 19-23

  Fu, Desheng ^a   Suzuki, Kazuyuki ^a   Kato, Kazumi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Bismuth layer structured perovskite; Ferroelectric thin film; Frequency dependence; Hysteresis loop; Polarization switching

Indexed keywords

CALCIUM COMPOUNDS; ELECTRIC POTENTIAL; HYSTERESIS; NATURAL FREQUENCIES; PEROVSKITE; POLARIZATION; SWITCHING SYSTEMS;

BISMUTH LAYER STRUCTURED PEROVSKITES; FREQUENCY DEPENDENCE; HYSTERESIS LOOPS; POLARIZATION SWITCHING;

FERROELECTRIC THIN FILMS;

EID: 33751197924     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490458900     Document Type: Article

References (6)

1. J. F. Scott and C. A. Araujo, "Ferroelectric memories," Science 246, 1400-1405 (1989).
2. C. A. Arajuo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott, and J. F. Scott, "Fatigue-free ferroelectric capacitors with platinum electrodes," Nature (London) 374, 627-629 (1995).
3. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee, and W. Jo, "Lanthanum-substituted bismuth titanate for use in non-volatile," Nature (London) 401, 682-684 (1999).
4. 15 thin films on Pt-passivated Si," Appl. Phys. Lett. 78, 1119-1121 (2001).
5. 9 ferroelectric thin films," Phys. Rev. Lett. (submitted to).
6. 15 ferroelectric thin films," Appl. Phys. Lett. (submitted to).