Novel precursors for the MOCVD of molybdenum nitride

ECS Transactions

Volumn 25, Issue 8 PART 1, 2009, Pages 593-600

  Thiede, T B ^a   Gwildies, V ^a   Alsamann, L ^a   Rische, D ^a   Fischer, R A ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL DESIGNS; CMOS TECHNOLOGY; GATE ELECTRODE MATERIALS; MOCVD; MOLYBDENUM COMPLEX; MOLYBDENUM NITRIDE; NOVEL PRECURSORS; THERMAL PROPERTIES; TUNGSTEN NITRIDE;

CHEMICAL COMPOUNDS; CMOS INTEGRATED CIRCUITS; COMPUTER CRIME; COORDINATION REACTIONS; DEPOSITION; MOLYBDENUM; MOLYBDENUM COMPOUNDS; NITRIDES; REFRACTORY METAL COMPOUNDS; THERMODYNAMIC PROPERTIES; THIN FILMS; TUNGSTEN; TUNGSTEN COMPOUNDS;

CHEMICAL VAPOR DEPOSITION;

EID: 76549117722     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3207645     Document Type: Conference Paper

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