Guanidinato-based precursors for MOCVD of metal nitrides (MxN: M = Ta,W)

Surface and Coatings Technology

Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 9125-9130

  Rische, Daniel ^a   Parala, Harish ^a   Baunemann, Arne ^a   Thiede, Tobias ^a   Fischer, Roland ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

Gate electrodes; Guanidinato ligands; Metal nitrides; MOCVD

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; THERMOANALYSIS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

GATE ELECTRODES; GUANIDINATO; REFRACTORY METAL NITRIDES;

REFRACTORY METAL COMPOUNDS;

CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; REFRACTORY METAL COMPOUNDS; SCANNING ELECTRON MICROSCOPY; THERMOANALYSIS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

EID: 34547665547     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.04.072     Document Type: Article

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