First-principles study of near surface point defects stability in Si (100) and SiGe(100)

Thin Solid Films

Volumn 518, Issue 9, 2010, Pages 2418-2421

  Fetah, S ^a,b,c   Chikouche, A ^d   Dkhissi, A ^b,c   Esteve A ^b,c   Djafari Rouhani, M ^b,c   Landa, G ^b,c   Pochet, P ^e  

^a FERHAT ABBAS UNIVERSITY   (Algeria)

^b LAAS CNRS   (France)

^c UNIVERSITÉ PAUL SABATIER   (France)

^d CENTRE DE DÉVELOPPEMENT DES ENERGIES RENOUVELABLES   (Algeria)

^e SP2M   (France)

Author keywords

DFT calculations; Frenkel pairs; Point defects; Si interstitial; Si(100); SiGe(100)

Indexed keywords

CALCULATIONS; DENSITY FUNCTIONAL THEORY; POINT DEFECTS; SURFACE DEFECTS;

DFT CALCULATION; FIRST-PRINCIPLES STUDY; FRENKEL PAIRS; INTERSTITIALS; NEAR SURFACES; SI(1 0 0); SI(100) SURFACE; SIGE(100);

CRYSTAL ATOMIC STRUCTURE;

EID: 76349110989     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.182     Document Type: Article

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