Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 253, Issue 1-2, 2006, Pages 63-67

  Martin Bragado, Ignacio ^a   Tian, S ^a   Johnson, M ^a   Castrillo, P ^b   Pinacho, R ^b   Rubio, J ^b   Jaraiz, M ^b  

^a SYNOPSYS INC   (United States)

^b Department of Electronics ^*  (Spain)

Author keywords

Activation; Defects; Diffusion; Kinetic Monte Carlo; Simulation; TCAD

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; DIFFUSION; DISSOLUTION; DOPING (ADDITIVES); MATHEMATICAL MODELS; MONTE CARLO METHODS;

KINETIC MONTE CARLO;

MICROELECTRONICS;

EID: 37849187710     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.035     Document Type: Article

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