Corrosion-resistant metal layers from a CMOS process for bioelectronic applications

Surface and Coatings Technology

Volumn 204, Issue 12-13, 2010, Pages 2055-2059

  Birkholz, M ^a   Ehwald, K E ^a   Wolansky, D ^a   Costina, I ^a   Baristiran Kaynak, C ^a   Frohlich M ^a   Beyer, H ^b   Kapp, A ^b   Lisdat, F ^b  

^a IHP   (Germany)

^b TECHNICAL UNIVERSITY OF APPLIED SCIENCES WILDAU   (Germany)

Author keywords

Bioelectronics; CMOS; Corrosion; Electrodes; Metal layers; TiN

Indexed keywords

AQUEOUS SOLUTIONS; BIOELECTRONIC APPLICATIONS; BIOELECTRONICS; BIOMEDICAL ELECTRODES; CHEMICAL COMPOSITIONS; CMOS PROCESSING; CMOS PROCESSS; COMPARATIVE STUDIES; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CORROSION-RESISTANT; ELECTROCATALYTIC ACTIVITY; ELEVATED TEMPERATURE; HEXACYANOFERRATES; HIGH CONCENTRATION; METAL LAYER; NACL SOLUTION; POTENTIAL RANGE; PROCESS TECHNOLOGIES; TIME SPAN; TIN LAYERS; WIDE PH RANGE;

CMOS INTEGRATED CIRCUITS; CORROSION RESISTANCE; DEPTH PROFILING; ELECTRIC BATTERIES; ELECTROLYTES; ELECTROLYTIC CELLS; METALS; PHENOLS; PHOTODEGRADATION; SILICIDES; SODIUM CHLORIDE; TITANIUM NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTROCHEMICAL ELECTRODES;

EID: 76349107376     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2009.09.075     Document Type: Article

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