Dose rate dependence of radiation-induced lattice defects and performance degradation in npn Si bipolar transistors by 2-MeV electron irradiation

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 469-472

  Hayama, K ^a   Takakura, K ^a   Ohyama, H ^a   Kuboyama, S ^b   Simoen, E ^c   Mercha, A ^c   Claeys, C ^c  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^c IMEC   (Belgium)

Author keywords

2 MeV electrons; Bipolar transistor; Dose rate dependence; Irradiation; Si

Indexed keywords

CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CURRENTS; ELECTRON IRRADIATION; ELECTRON TRAPS; SILICON COMPOUNDS;

COLLECTOR CURRENT; DOSE RATE DEPENDENCE;

BIPOLAR TRANSISTORS;

EID: 36048964240     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.09.001     Document Type: Article

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