Environmental conditions effect on characteristics of some unijunction and bijunction semiconductor devices

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 564, Issue 1, 2006, Pages 463-470

  Kamh, Sanaa A ^a   Soliman, F A S ^b  

^a Ain Shams University   (Egypt)

^b NUCLEAR MATERIALS AUTHORITY   (Egypt)

Author keywords

BJT; Electrical parameters; Radiation effects; Semiconductor devices; Solar cell

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER PROGRAMMING; RADIATION DAMAGE; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS;

BIJUNCTION SEMICONDUCTOR DEVICES; BIPOLAR JUNCTION TRANSISTOR (BJT); ELECTRICAL PARAMETERS; MINORITY CARRIERS;

SEMICONDUCTOR DEVICES;

EID: 33746099669     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2006.03.048     Document Type: Article

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