Gain and defect bi-stability in radiation damaged silicon bipolar transistors

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 21-24

  Fleming, R M ^a   Seager, C H ^a   Lang, D V ^a   Bielejec, E ^a   Campbell, J M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Devices; Experiment

Indexed keywords

ANNEALING; BIPOLAR TRANSISTORS; BISMUTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON IRRADIATION; KINETIC THEORY; NEUTRONS;

BISTABLE DEFECTS; ION DAMAGE CLUSTER; TRANSIENT SPECTROSCOPY (DLTS);

SILICON;

EID: 36049028721     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.08.105     Document Type: Article

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