Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

Thin Solid Films

Volumn 518, Issue 9, 2010, Pages 2524-2527

  Johnson, B C ^a   McCallum, J C ^a   Willems van Beveren, L H ^b   Gauja, E ^b  

^a UNIVERSITY OF MELBOURNE   (Australia)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

DLTS; EDMR; Implantation; Interface traps; Minority carriers; MOSFET

Indexed keywords

BULK TRAPS; DLTS; FLUENCES; FURNACE ANNEAL; IMPLANTATION DAMAGE; IMPLANTED DOPANTS; INTERFACE TRAPS; ION-IMPLANTED SILICON; LOW ENERGY ION IMPLANTATION; METAL-OXIDE- SEMICONDUCTORCAPACITORS; MINORITY CARRIER; MOS-FET; OXIDE CHARGE; RAPID THERMAL ANNEAL; SPIN DEPENDENT TRANSPORT; TRAPPED CHARGE;

FIELD EFFECT TRANSISTORS; ION BOMBARDMENT; ION IMPLANTATION; MOS CAPACITORS; MOSFET DEVICES; RAPID THERMAL PROCESSING; SPIN DYNAMICS;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 76049125292     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.152     Document Type: Article

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