Substantial improvement of the photovoltaic characteristics of TiO 2/CuInS2 interfaces by the use of recombination barrier coatings

Thin Solid Films

Volumn 451-452, Issue , 2004, Pages 639-643

  Lenzmann, F ^a   Nanu, M ^b   Kijatkina, O ^c   Belaidi, A ^d  

^a TNO   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c TALLINN UNIVERSITY OF TECHNOLOGY   (Estonia)

^d HAHN MEITNER INSTITUT   (Germany)

Author keywords

CuInS2; Interface recombination; Nanostructured solar cells; Recombination barrier

Indexed keywords

ABSORPTION; COPPER COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; DENSITY (OPTICAL); INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; PASSIVATION; PHOTOCURRENTS; PHOTOVOLTAIC CELLS; PRESSURE EFFECTS; SPECTRUM ANALYSIS; THERMAL BARRIER COATINGS; TITANIUM DIOXIDE;

INTERFACE RECOMBINATION; NANOSTRUCTURED SOLAR CELLS; RECOMBINATION BARRIERS;

SOLAR CELLS;

EID: 1442307888     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.091     Document Type: Conference Paper

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