Laser effects on porous silicon synthesis by photoelectrochemical etching process

Journal of Optoelectronics and Advanced Materials

Volumn 11, Issue 11, 2009, Pages 1641-1646

  Khalid, Omar ^a   Hassan, Z ^a   Ramzy, Asmiet ^a   Abu Hassan, H ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

Laser effect; Nd:YAG laser; Porous silicon

Indexed keywords

ELECTROCHEMISTRY; ETCHING; NANOSTRUCTURES; NEODYMIUM LASERS; SCANNING ELECTRON MICROSCOPY; YTTRIUM ALUMINUM GARNET;

ETCHING MECHANISM; ETCHING PROCESS; LASER EFFECTS; LASER POWER; ND : YAG LASERS; OPTICAL AND ELECTRICAL PROPERTIES; PHOTO-ELECTROCHEMICAL ETCHING; ROOM TEMPERATURE LUMINESCENCE;

POROUS SILICON;

EID: 75949108685     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)

1. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
2. Z. Ch. Feng, R, Tsu, "Porous Silicon", (World Scientific, Singapore, 1994).
3. A. G. Cullis, L. T. Canham, P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997).
4. G. Amato, C. Delerue, H. J. von Bardeleben, "Structural and Optical Properties of Porous Silicon Nanostructures" Vol.5, chapter 5, Yoshihiko Kanemitsu, "Silicon -Based Nanostructures", (CRC Press,1998).
5. Z. Fekih, F. Z. Otmani, N. Ghellai, N. E. Chabanne- Sari, "Characterisation of the porous silicon layers", (2006) Unit of research of Materials and renewable Energies (U.R.M.E.R) and University Abou - Baker Belkaid B.p: 119 TLEMCEN 13000 ALGERIA .
6. L T. Rittenhouse, Paul W. Bohna, Tim K. Hossain, I. Adesida, J. Lindesay, A. Marcus, J. of Appl. Phys. 95, 490 (2004).
7. M. Ohmukai, M. Taniguchi, Y. Tsutsumi, Mat. Sci. Eng. B86, 26 (2001).
8. V. Lehman, U. Gosele, Appl. Phys. Lett. 58, 856 (1991).
9. H. Timothy, G. Froerer, "Photoluminescence in Analysis of Surfaces and Interfaces", Encyclopedia of Analytical Chemistry R.A. Meyers (Ed.) (John Wiley & Sons Ltd, Chichester, 2000) pp. 9209-9231.
10. M. Yang, D. Huang, P. Hao, F. Zhang, X. Hou, X. Wang, Study of Raman Peak Shift and the Linewidth of Light-emitting Porous Silicon, Surface Physics Laboratory, Fudan University, Shanghai 200433, China (1993).
11. R. Prabakaran, R. Kesavamoorthy, Alok Singh, Bull. Mater. Sci., 28, (3), 219 (2005) © Indian Academy of Sciences.
12. K. W. Cheah, T. Chan, W. L. Lee, Appl. Phys. Lett., 63(25), 3464 (1993) .
13. C. H. Chen, Y. F. Chen, Solid State Commun. 111, 681 (1998).
14. I. K. Meshkovskii, O. V. Klim S. N. Dmitriev, Tech. Phys. Lett., 23, 11 (1997).
15. Sh. D. Milani , R. S. Dariani , A. Mortezaali, V. Daadmehr, K. Robbie, J. Optoelectron. Adv. Mater. , 8(3), 1216 (2006).
16. R. T. Young, R. F. Wood "Laser Processing of Semiconductor Materials", Annual Review of Materials Science 12, 323 (1982).
17. V. Lo, Y. W. Wong, H. Cho, Y. Q. Chem., K. Y. Tong, Simecondutor. Sci. Technol., H, 1285 (1996).
18. C John. Ion Laser Processing of Engineering Materials, (Butterworth-Heinemann, 2005).