Excimer laser assisted spin-on doping of boron into silicon

Semiconductor Science and Technology

Volumn 11, Issue 9, 1996, Pages 1285-1290

  Lo, V C ^a   Wong, Y W ^a   Cho, H C ^a   Chen, Y Q ^a,b   Ho, S M ^a   Chan, P W ^a   Tong, K Y ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; EMULSIONS; EXCIMER LASERS; IRRADIATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; THIN FILMS;

EXCIMER LASER ASSISTED SPIN ON DOPING; HALL MOBILITY; SHEET RESISTANCE; SPIN ON DOPANT EMULSION;

SILICON WAFERS;

EID: 0030246825     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/9/008     Document Type: Article

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