The correlation of morphology and surface resistance in porous silicon

Journal of Optoelectronics and Advanced Materials

Volumn 8, Issue 3, 2006, Pages 1216-1220

  Milani, Sh D ^a   Dariani, R S ^a,b   Mortezaali, A ^a   Daadmehr, V ^a   Robbie, K ^b  

^a ALZAHRA UNIVERSITY   (Iran)

^b QUEEN S UNIVERSITY   (Canada)

Author keywords

Nano particles; Photoluminescence; Porous silicon; Surface resistance

Indexed keywords

MORPHOLOGY; NANOPARTICLES; PHOTOLUMINESCENCE; POROSITY; POROUS SILICON;

IV CHARACTERISTICS; MEAN SIZE; PHOTOLUMINESCENCE SPECTRUM; POROUS SILICON LAYERS; PREPARATION CONDITIONS; QUANTUM CONFINEMENT MODELS; SILICON MORPHOLOGY;

SURFACE RESISTANCE;

EID: 33745893565     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (13)

1. L. A. Balagurov, D. G. Yarkin, E. A. Petrova, A. F. Orlov, S. Ya. Andrushin, J. Appl. Phys. 82, 4647 (1997).
2. D. B. Dimitrov, Phys. Rev. B 51, 1562 (1995).
3. D. Deresmes, V. Marisael, D. Stievenard, C. Ortega, Thin Solid Films. 255, 258 (1995).
4. Z. Chen, T. Y. Lee, G. Bosman, J. Appl. Phys. 76, 2499 (1994).
5. V. Yu. Timoshenko, P. K. Kashkarov, A. B. Matveeva, E. A. Konstantinova, H. Flietner, Th. Dittrich, Thin Solid Films. 276, 216 (1996).
6. P. Menna, G. Di Francia, V. La Ferrara, Solar Energy Materials and Solar Cells, 37, 13 (1995).
7. L. T. Canham, Properties of Porous Silicon, INSPEC, London (1997).
8. J. Dian, A. Macek, D. Niznansky, I. Nemec, V. Vrkoslav, T. Chvojka, I. Jelinek, Applied Surface Science 238, 169-174 (2004).
9. L. J. Van der Pauw, Philips Res. Repts. 13, 1-9 (1958).
10. L. J. Van der Pauw, Philips Tech. Rev. 20, 220 (1958).
11. G. Barillaro, A. Diligenti, G. Marola, L. M. Strambini, Sensors and Actuators B in press (2004).
12. T. Gao, J. Gao, M. J. Sailor, Langmuir 18, 9953 (2002).
13. G. Lerondel, R. Romestain, Thin Solid Films, 297, 114 (1997).