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Solid State Communications

Volumn 111, Issue 12, 1999, Pages 681-685

Optical properties of n-type porous silicon obtained by photoelectrochemical etching

(2) Chen, C H a Chen, Y F a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON;

INFRARED ABSORPTION MEASUREMENT; PHOTOELECTROCHEMICAL ETCHING; PHOTON ENERGY; QUANTUM CONFINEMENT EFFECT;

POROUS SILICON;

EID: 0032592858 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1098(99)00271-9 Document Type: Article

Times cited : (24)

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