Ferroelectric thin-film devices

Ferroelectrics

Volumn 371, Issue 1 PART 1, 2008, Pages 3-9

  Scott, J F ^a   Morrison, F D ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF ST ANDREWS   (United Kingdom)

Author keywords

Ferroelectric random access memories; Ferroelectrics; Multiferroics; Nano devices

Indexed keywords

BASE METAL ELECTRODE; CONSTANT PHASE ELEMENT; DIELECTRIC BREAKDOWNS; DRAM CAPACITOR; EQUIVALENT CIRCUIT MODEL; FERROELECTRIC MEMORY; FERROELECTRIC RANDOM ACCESS MEMORIES; FUNDAMENTAL PHYSICS; INDUSTRY PROBLEMS; MULTIFERROICS; MULTILAYER CAPACITORS; NANO-DEVICES; PROTOTYPE DEVICES; SINGLE CAPACITOR;

CAPACITANCE; CAPACITORS; CARBON NANOTUBES; FERROELECTRIC DEVICES; FERROELECTRIC FILMS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; FILM PREPARATION; MULTILAYER FILMS; RANDOM ACCESS STORAGE; THIN FILM DEVICES; THREE DIMENSIONAL;

FERROELECTRIC MATERIALS;

EID: 75949087567     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190802384500     Document Type: Conference Paper

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