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Volumn 156-158, Issue , 2009, Pages 483-486
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Defect characterization of poly-ge and VFG-grown ge material
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Author keywords
Cathodoluminescence; Defects; EBIC; Electrical activity; Ge; Optical activity; Photoluminescence
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Indexed keywords
CATHODOLUMINESCENCE;
ELECTRIC CURRENTS;
GERMANIUM;
LIGHT EMISSION;
OPTICAL MATERIALS;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR GROWTH;
SILICON;
COST EFFECTIVENESS;
BAND-TO-BAND TRANSITION;
CHARACTERIZATION METHODS;
CRYSTALLIZATION MECHANISMS;
DEFECT CHARACTERIZATION;
DEFECT FORMATION;
ELECTRICAL ACTIVITIES;
ELECTRICAL ACTIVITY;
GE;
GROWTH PROCESS;
IS COSTS;
MODEL SYSTEM;
N-TYPE GE;
OPTICAL ACTIVITY;
PHOTOLUMINESCENCE SPECTRUM;
PHOTOVOLTAICS;
ROOM TEMPERATURE;
EBIC;
DEFECTS;
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EID: 75849148085
PISSN: 10120394
EISSN: None
Source Type: Book Series
DOI: 10.4028/www.scientific.net/SSP.156-158.483 Document Type: Conference Paper |
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Times cited : (2)
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References (13)
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