Electrical characteristics of Au/n-Ge Schottky barrier diode grown on Si substrate

Shinku/Journal of the Vacuum Society of Japan

Volumn 43, Issue 3, 2000, Pages 277-279

  Yoshimoto, Tomomi ^a   Sakamoto, Kunihiro ^b   Iwata, Tatsuo ^a  

^a TOKAI UNIVERSITY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; GOLD; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SUBSTRATES; SURFACES;

HIGH TEMPERATURE POST GROWTH ANNEALING; SOLID SOURCE MOLECULAR BEAM EPITAXY;

SCHOTTKY BARRIER DIODES;

EID: 0033746424     PISSN: 05598516     EISSN: None     Source Type: Journal    
DOI: 10.3131/jvsj.43.277     Document Type: Article

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