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Volumn 156-158, Issue , 2009, Pages 305-311

Role of ion irradiation induced lattice defects on nanoscale capacitive behavior of graphene

Author keywords

Graphene; Ion irradiation; Quantum capacitance

Indexed keywords

CAPACITANCE; DEFECTS; GRAPHENE; IONS; IRRADIATION; MONOLAYERS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WIRES; SILICON COMPOUNDS; ION BOMBARDMENT; NONDESTRUCTIVE EXAMINATION; SILICA;

EID: 75849139226     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.156-158.305     Document Type: Conference Paper
Times cited : (1)

References (19)
  • 2
    • 33744469329 scopus 로고    scopus 로고
    • C. Berger et al., Science 312, 1191 (2006).
    • (2006) Science , vol.312 , pp. 1191
    • Berger, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.