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Volumn 156-158, Issue , 2009, Pages 305-311
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Role of ion irradiation induced lattice defects on nanoscale capacitive behavior of graphene
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Author keywords
Graphene; Ion irradiation; Quantum capacitance
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Indexed keywords
CAPACITANCE;
DEFECTS;
GRAPHENE;
IONS;
IRRADIATION;
MONOLAYERS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR QUANTUM WIRES;
SILICON COMPOUNDS;
ION BOMBARDMENT;
NONDESTRUCTIVE EXAMINATION;
SILICA;
CAPACITIVE BEHAVIOR;
COMPARATIVE STUDIES;
DAMAGED REGION;
ELECTRICAL PROPERTY;
FLUENCES;
GRAPHENES;
HIGH ENERGY;
ION IRRADIATION;
LATERAL VARIATIONS;
LATTICE DEFECTS;
NANO SCALE;
NARROW DISTRIBUTION;
NONDESTRUCTIVE CHARACTERIZATION;
PER UNIT;
QUANTUM CAPACITANCE;
SCANNING CAPACITANCE SPECTROSCOPY;
SI SUBSTRATES;
SINGLE LAYER;
GRAPHITE;
GRAPHENE;
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EID: 75849139226
PISSN: 10120394
EISSN: None
Source Type: Book Series
DOI: 10.4028/www.scientific.net/SSP.156-158.305 Document Type: Conference Paper |
Times cited : (1)
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References (19)
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