Simulation of current spreading for GaN-based light-emitting diodes

Optics and Laser Technology

Volumn 42, Issue 5, 2010, Pages 737-740

  Wang, Pei ^a,b   Wei, Wei ^a   Cao, Bin ^a   Gan, Zhiyin ^a,b   Liu, Sheng ^a,b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Current spreading; GaN; Light emitting diodes

Indexed keywords

CURRENT SPREADING; ELECTRODE PATTERN; GAN LIGHT-EMITTING DIODES; GAN-BASED LIGHT-EMITTING DIODES; HYBRID MODELING; INTER-DIGITATED ELECTRODES; LED CHIPS; LIGHT DISTRIBUTION; MESA STRUCTURE; NONUNIFORM; THERMAL CHARACTERISTICS; UNIFORM CURRENTS;

DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; ORGANIC LIGHT EMITTING DIODES (OLED);

LIGHT EMITTING DIODES;

EID: 75749150452     PISSN: 00303992     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optlastec.2009.11.018     Document Type: Article

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