Time resolved photoluminescence of In(N)As quantum dots embedded in GaIn(N)As/GaAs quantum well

Applied Physics Letters

Volumn 96, Issue 4, 2010, Pages

  Syperek, M ^a   Kudrawiec, R ^a   Baranowski, M ^a   Sek G ^a   Misiewicz, J ^a   Bisping, D ^b   Marquardt, B ^b   Forchel, A ^b   Fischer, M ^c  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF WÜRZBURG   (Germany)

^c NANOPLUS NANOSYSTEMS AND TECHNOLOGIES GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DYNAMICS; DYNAMIC PROPERTY; INAS/INGAAS; QUANTUM DOT; QUANTUM WELL; RED SHIFT; ROOM TEMPERATURE; STRAIN DISTRIBUTIONS; TIME-RESOLVED PHOTOLUMINESCENCE;

GALLIUM ALLOYS; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 75749108986     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3299258     Document Type: Article

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