Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor

Journal of Applied Physics

Volumn 105, Issue 11, 2009, Pages

  Saxena, H ^a   Peale, R E ^a   Buchwald, W R ^b  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCY RANGES; GATE BIAS; GATE CONTACT; INGAAS/INP; MATERIALS SYSTEMS; NARROW BANDS; PLASMON RESONANCES; RESONANCE FREQUENCIES; RESONANT ABSORPTION; SHEET CHARGE DENSITY; SOURCE AND DRAINS; STANDARD PHOTOLITHOGRAPHY; TERAHERTZ RADIATION; TRANSMISSION GRATINGS; TWO-DIMENSIONAL ELECTRON GAS (2DEG); VOLTAGE-TUNABLE;

ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; GAS ABSORPTION; HIGH ELECTRON MOBILITY TRANSISTORS; PLASMONS; RESONANT TUNNELING; SURFACE PLASMON RESONANCE; TWO DIMENSIONAL;

TWO DIMENSIONAL ELECTRON GAS;

EID: 67649560622     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3129319     Document Type: Article

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