Theoretical calculation of the dislocation width and Peierls barrier and stress for semiconductor silicon

Journal of Physics Condensed Matter

Volumn 22, Issue 5, 2010, Pages

  Wang, Shaofeng ^a   Zhang, Huili ^a   Wu, Xiaozhi ^a   Liu, Ruiping ^a  

^a CHONGQING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL STRESS; DISLOCATION CORE; DISLOCATION ENERGY; DYNAMICS MODELS; GLIDE DISLOCATIONS; HIGH TEMPERATURE; LOW TEMPERATURES; META-STABLE STATE; NUMERICAL SIMULATION; PEIERLS BARRIERS; PEIERLS STRESS; PEIERLS-NABARRO; SEMICONDUCTOR SILICON; SHUFFLE DISLOCATIONS; THEORETICAL CALCULATIONS; TOTAL ENERGY CALCULATION;

BOND LENGTH; COMPLEXATION; COMPUTER SIMULATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; STRAIN ENERGY;

SCREW DISLOCATIONS;

EID: 75649151348     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/22/5/055801     Document Type: Article

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