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Physical Review Letters

Volumn 104, Issue 1, 2010, Pages

Damping of exciton rabi rotations by acoustic phonons in optically excited InGaAs/GaAs quantum dots

(7) Ramsay, A J a Gopal, Achanta Venu b Gauger, E M c Nazir, A d Lovett, B W c Fox, A M a Skolnick, M S a

a UNIVERSITY OF SHEFFIELD (United Kingdom)

b TATA INSTITUTE OF FUNDAMENTAL RESEARCH (India)

c UNIVERSITY OF OXFORD (United Kingdom)

d UNIVERSITY COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC PHONONS; DEPHASING; EXCITONIC TRANSITION; EXPERIMENTAL EVIDENCE; INGAAS/GAAS; INTENSITY DAMPING; QUANTITATIVE AGREEMENT; QUANTUM DOT; ROTATION MEASUREMENT; TEMPERATURE DEPENDENT;

ACOUSTICS; DAMPING; ELECTROMAGNETIC WAVE EMISSION; OPTICAL WAVEGUIDES; PHONONS; ROTATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 74949091706 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.104.017402 Document Type: Article

Times cited : (344)

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