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Volumn 77, Issue 23, 2008, Pages

Charge and spin readout scheme for single self-assembled quantum dots

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EID: 46149114350     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.77.235442     Document Type: Article
Times cited : (38)

References (33)
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    • PRLTAO 0031-9007 10.1103/PhysRevLett.93.016601
    • V. N. Golovach, A. Khaetskii, and D. Loss, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.93.016601 93, 016601 (2004).
    • (2004) Phys. Rev. Lett. , vol.93 , pp. 016601
    • Golovach, V.N.1    Khaetskii, A.2    Loss, D.3
  • 25
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    • With this dimensions a diode capacity of 50 pF is expected, leading to a switching speed on the nanosecond timescale. Due to stray capacities and impedance mismatch in the cryogenic part of the experimental setup, the settling time for applied voltages after switching is increased to ∼100 ns. Nevertheless, this effect can be neglected since the used repetition frequencies are well below 1 MHz and the time for voltage stabilization can be allowed in the pulse schemes.
    • With this dimensions a diode capacity of 50 pF is expected, leading to a switching speed on the nanosecond timescale. Due to stray capacities and impedance mismatch in the cryogenic part of the experimental setup, the settling time for applied voltages after switching is increased to ∼100 ns. Nevertheless, this effect can be neglected since the used repetition frequencies are well below 1 MHz and the time for voltage stabilization can be allowed in the pulse schemes.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.