Rabi oscillations in the excitonic ground-state transition of InGaAs quantum dots

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 8, 2002, Pages 813061-813064

  Borri, P ^a   Langbein, W ^a   Schneider, S ^a   Woggon, U ^a   Sellin, R L ^a   Ouyang, D ^a   Bimberg, D ^a  

^a TU DORTMUND UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM; INDIUM;

ARTICLE; CALCULATION; DIPOLE; LOW TEMPERATURE; MEASUREMENT; MOTION; OPTICS; OSCILLATION; QUANTUM MECHANICS;

EID: 0037104420     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (19)

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11. "Note that Fig. 1(b) shows the differential transmission of the time-resolved probe field amplitude at a given time, which is qualitatively similar to Δ T/T and allowed faster measurement times with improved stability.
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17. Fine-structure polarization splittings of the 0-X transition are in the 10-100-μeV range in this type of dot. We found that they damp the Rabi oscillations only for long pulse durations (above a few ps).
18. A pulse area of π in the calculations is defined as the time-integrated Rabi frequency corresponding to a rotation of π of the excitonic population for a two-level system without biexcitons and without dephasing.
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