Di-electrophoresis assembly and fabrication of SWCNT field-effect transistor

Chinese Science Bulletin

Volumn 54, Issue 23, 2009, Pages 4451-4457

  Tian, XiaoJun ^a   Wang, YueChao ^a   Yu, HaiBo ^a   Dong, ZaiLi ^a   Xi, Ning ^a   Tung, Steve ^b  

^a SHENYANG INSTITUTE OF AUTOMATION   (China)

^b University of Arkansas   (United States)

Author keywords

Di electrophoresis assembly; Field effect transistor; Improvement of field effect performance; Single walled carbon nanotube (SWCNT)

Indexed keywords

EID: 74749107582     PISSN: 10016538     EISSN: 18619541     Source Type: Journal    
DOI: 10.1007/s11434-009-0206-3     Document Type: Article

References (24)

1. Iijima S, Ichihashi T. Single-shell carbon nanotubes of 1-nm diameter. Nature, 1993, 363: 603-604.
2. Dresselhaus M S. Nanotechnology: New tricks with nanotubes. Nature, 1998, 391: 19-20.
3. Bezryadin A, Verschueren A R M, Tans S J, et al. Multiprobe transport experiments on individual single-wall carbon nanotubes. Phys Rev Lett, 1998, 80: 4036-4039.
4. Frank S, Poncharal P, Wang Z L, et al. Carbon nanotube quantum resistors. Science, 1998, 280: 1744-1746.
5. Tans S J, Verschueren A R M, Dekker C. Room-temperature transistor based on a single carbon nanotube. Nature, 1998, 393: 49-52.
6. Baughman R H, Zakhidov A A, De Heer W A. Carbon nanotubes - The route toward applications. Science, 2002, 297: 787-792.
7. McEuen P L, Fuhrer M S, Park H K. Single-walled carbon nanotube electronics. IEEE Tran Nanotech, 2002, 1: 78-85.
8. Avouris Ph, appenzeller J, Martel R, et al. Carbon nanotube electronics. J Proc IEEE, 2003, 91: 1172-1784.
9. Dai H J, Javey A, Pop A, et al. Electrical transport properties and Field-Effect Transistors of Carbon Nanotubes. NANO: Brief Reports and Reviews, 2006, 1: 1-4.
10. Li P J, Zhang W J, Zhang Q F, et al. The influence of contact metal in carbon nanotube transistor. Acta Phys Sin, 2006, 55: 5460-5465.
11. Hu Y F, Yao K, Wang S, et al. Fabrication of high performance top-gate complementary inverter using a single carbon nanotube and via a simple process. Appl Phys Lett, 2007, 90: 223116-223118.
12. Martel R, Schmidt T, Shea H R, et al. Single and multi-wall carbon nanotube field-effect transistors. Appl Phys Lett, 1998, 73: 2447-2449.
13. Wind S J, Appenzeller J, Martel R, et al. Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes. Appl Phys Lett, 2002, 80: 3817-3819.
14. Brintlinger T, Fuhrer M S, Melngailis J, et al. Electrodes for carbon nanotube devices by focused electron beam induced deposition of gold. J Vacuum Sci Tech B, 2005, 23: 3174-3177.
15. Soh H T, Quate C F, Morpurgo A F, et al. Integrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubes. Appl Phys Lett, 1999, 75: 627-629.
16. Tian X J, Wang Y C, Xi N, et al. A study on single CNT's accurate assembly and electrical contact for fabricating nanoelectronic device. JCEMS, 2006, 25: 490-493.
17. Nagahara L A, Amlani I, Lewenstein J, et al. Directed placement of suspended carbon nanotubes for nanometer-scale assembly. Appl Phys Lett, 2002, 80: 3826-3828.
18. Wakaya F, Takaoka J, Fukuzumi K, et al. Fabrication of a carbon nanotube device using a patterned electrode and a local electric field. Superlatt Microstruct, 2003, 34: 401-405.
19. Krupke R, Hennrich F, Weber H B, et al. Contacting single bundles of carbon nanotubes with alternating electric fields. Appl Phys A, 2003, 76: 397-400.
20. Li J Q, Zhang Q, Peng N, et al. Manipulation of carbon nanotubes using AC dielectrophoresis. Appl Phys Lett, 2005, 86: 153116-53118.
21. Tian X J, Wang Y C, Xi N, et al. Pulse Gas Alignment and AFM Manipulation of Single-Wall Carbon Nanotube. Chinese Sci Bull, 2008, 53: 251-256.
22. Collins P G, Arnold M S, Avouris Ph. Engineering carbon nanotubes and using electrical breakdown. Science, 2001, 292: 706-709.
23. Martina C A, Sandler J K W, Windle A H, et al. Electric field-induced aligned multi-wall carbon nanotube networks in epoxy composites. Polymer, 2005, 46: 877-886.
24. Collins P G, Bradley K, Ishigami M, et al. Extreme oxygen sensitivity of electronic properties of carbon nanotubes. Science, 2000, 287: 1801-1804.