Measurement of As diffusivity in Ni2Si thin films

Microelectronic Engineering

Volumn 87, Issue 3, 2010, Pages 263-266

  Blum, I ^a,b   Portavoce, A ^a,b   Mangelinck, D ^a,b   Daineche, R ^a,b   Hoummada, K ^a,b   Labar J L ^c   Carron, V ^d   Bernardini, J ^a,b  

^a AIX MARSEILLE UNIVERSITY   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

^c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^d CEA LETI   (France)

Author keywords

Arsenic; Diffusion; Grain boundaries; Nickel silicides; Polycrystal; Simulations

Indexed keywords

ACTIVATION ENERGY; ARSENIC; CRYSTAL LATTICES; GRAIN BOUNDARIES; NICKEL COMPOUNDS; POLYCRYSTALS; SECONDARY ION MASS SPECTROMETRY; SILICA; SILICIDES; SILICON; THIN FILMS;

CONCENTRATION PROFILES; ELEMENT DIFFUSION; GRAIN-BOUNDARY DIFFUSION; IMPURITY SEGREGATION; NICKEL SILICIDE; PREEXPONENTIAL FACTOR; SECONDARY ION MASS SPECTROSCOPY; SIMULATIONS;

DIFFUSION;

EID: 74649086600     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.05.020     Document Type: Article

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