Aligned-crystalline si films on non-single-crystalline substrates

Materials Research Society Symposium Proceedings

Volumn 1150, Issue , 2009, Pages 73-84

  Findikoglu, Alp T ^a   Holesinger, Terry G ^a   Niemeyer, Alyson C ^a   Matias, Vladimir ^a   Ugurlu, Ozan ^b  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS GLASS; AMORPHOUS SI FILMS; CRYSTALLINE ORDER; CRYSTALLINE SI; CRYSTALLINE SILICONS; CRYSTALLOGRAPHIC ORIENTATIONS; DEPOSITION PROCESS; DIFFUSION LENGTH; DOPING CONCENTRATION; ELECTRICAL CHARACTERISTIC; EPITAXIAL BUFFER LAYERS; EPITAXIAL SILICON; EXPERIMENTAL TECHNIQUES; EXTERNAL QUANTUM EFFICIENCY; FORMING GAS; IN-PLANE; KEY TECHNIQUES; LOW ANGLE GRAIN BOUNDARIES; MAJORITY CARRIERS; METAL INSULATOR SEMICONDUCTOR STRUCTURES; METAL TAPES; MGO FILMS; MINORITY CARRIER LIFETIMES; MOSAIC SPREAD; OUT-OF-PLANE; P-SI LAYERS; P-TYPE DOPING; POLYCRYSTALLINE METALS; RECENT PROGRESS; ROOM TEMPERATURE; SEED LAYER; SI FILMS; SINGLE-CRYSTALLINE;

AMORPHOUS FILMS; AMORPHOUS SILICON; BUFFER LAYERS; CARRIER CONCENTRATION; CARRIER LIFETIME; CONDUCTIVE FILMS; CRYSTALLINE MATERIALS; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; GALVANOMAGNETIC EFFECTS; GLASS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HALL MOBILITY; INSULATION; ION BEAM ASSISTED DEPOSITION; METAL INSULATOR BOUNDARIES; METALS; MIS DEVICES; NITRIDES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE PROPERTIES; TRANSPORT PROPERTIES;

EPITAXIAL FILMS;

EID: 74549199387     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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