Effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon films

Applied Physics Letters

Volumn 89, Issue 26, 2006, Pages

  Choi, Woong ^a,b   Lee, Jung Kun ^a   Findikoglu, Alp T ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GRAIN ALIGNMENT; INTERFACE TRAP DENSITY; POLYCRYSTALLINE SUBSTRATES; THERMALLY OXIDIZED ALIGNED-CRYSTALLINE SILICON (ACSI) FILMS;

CRYSTALLINE MATERIALS; GRAIN GROWTH; INTERFACES (MATERIALS); MOS CAPACITORS; OXIDATION; POLYSILICON; SILICON; THERMAL EFFECTS;

METALLIC FILMS;

EID: 33846076661     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2424655     Document Type: Article

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