Active circuit to through silicon via (TSV) noise coupling

2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS '09

Volumn , Issue , 2009, Pages 97-100

  Cho, Jonghyun ^a   Shim, Jongjoo ^a   Song, Eakhwan ^a   Pak, Jun So ^a   Lee, Junho ^b   Lee, Hyungdong ^b   Park, Kunwoo ^b   Kim, Joungho ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

3-DIMENSIONAL; ACTIVE CIRCUITS; COUPLING MODELS; COUPLING NOISE; EQUIVALENT LUMPED CIRCUITS; GUARD-RINGS; NOISE COUPLING; NOISE SOURCE; S PARAMETERS; SHIELDING TECHNIQUES; SILICON SUBSTRATES; STRUCTURAL PARAMETER; SUBSTRATE NOISE COUPLING; THROUGH-SILICON-VIA; TRANSMISSION-LINE MATRIXES;

CHIP SCALE PACKAGES; LUMPED PARAMETER NETWORKS; PHASE LOCKED LOOPS; SCATTERING PARAMETERS; SUBSTRATES; TIMING JITTER;

THREE DIMENSIONAL;

EID: 74549172091     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EPEPS.2009.5338469     Document Type: Conference Paper

References (7)

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