Microstructural and electrical properties of CaTiO3-CaCu3Ti4O12 ceramics

Journal of Alloys and Compounds

Volumn 491, Issue 1-2, 2010, Pages 423-430

  Wang, Chih Ming ^a   Lin, Shih Yuan ^b   Kao, Kuo Sheng ^c   Chen, Ying Chung ^b   Weng, Shang Chih ^a  

^a CHENG SHIU UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c SHU TE UNIVERSITY   (Taiwan)

Author keywords

Ceramics; Dielectric response; Microstructure; Sintering; Solid state reactions

Indexed keywords

CERAMICS; CRYSTAL PHASIS; CRYSTALLINE STRUCTURE; DIELECTRIC CONSTANTS; DIELECTRIC RESPONSE; ELECTRICAL PROPERTY; GRAIN SIZE; LIQUID PHASE; MICRO-STRUCTURAL; MOLAR FRACTIONS; POLYCRYSTALLINE; PREFERENTIAL ORIENTATION; SECONDARY RECRYSTALLIZATION; SINTERING TEMPERATURES; SURFACE SCANNING;

CALCIUM ALLOYS; CERAMIC MATERIALS; CRYSTAL ORIENTATION; DIELECTRIC LOSSES; ELECTRIC PROPERTIES; INDUSTRIAL MANAGEMENT; MICROSTRUCTURE; SCANNING ELECTRON MICROSCOPY; SOLID STATE REACTIONS; X RAY DIFFRACTION;

SINTERING;

EID: 74449092883     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.10.216     Document Type: Article

References (31)

1. Atanassova E., and Paskaleva A. Microelectron. Reliab. 47 (2007) 913-923
2. Kwon S., Huang C.C., Subramanian M.A., and Cann D.P. J. Alloys Compd. 473 (2009) 433-436
3. Fechine P.B.A., Tavora A., Kretly L.C., Almeida A.F.L., Santos M.R.P., Freire F.N.A., and Sombra A.S.B. J. Electron. Mater. 35 (2006) 1848-1856
4. Almeida A.F.L., Fechine P.B.A., Kretly L.C., and Sombra A.S.B. J. Mater. Sci. 41 (2006) 4623-4631
5. Deschanvres A., Raveau B., and Tollemer F. Bull. Soc. Chim. Fr. 4077 (1967)
6. Bochu B., Deschizeaux M.N., and Joubert J.C. J. Soild State Chem. 29 (1979) 291-298
7. Subramanian M.A., Li D., Duan N., Reisner B.A., and Sleight A.W. J. Solid State Chem. 151 (2000) 323-325
8. Moussa S.M., and Kennedy B.J. Mater. Res. Bull. 36 (2001) 2525-2529
9. Pan M.J., and Bender B.A. J. Am. Ceram. Soc. 88 (2005) 2611-2614
10. Guillemet-Fritsch S., Lebey T., Boulos M., and Durand B. J. Eur. Ceram. Soc. 26 (2006) 1245-1257
11. Ni L., Chen X.M., Liu X.Q., and Hou R.Z. Solid State Commun. 139 (2006) 45-50
12. Yeoh C.K., Ahmad M.F., and Ahmad Z.A. J. Alloys Compd. 443 (2007) 155-160
13. Wang C.M., Kao K.S., Lin S.Y., Chen Y.C., and Weng S.C. J. Phys. Chem. Solids 69 (2008) 608-610
14. Cullity B.D. Elements of X-ray Diffraction (1978), Addision-Wesley p. 102
15. Barrett C.S., and Massalski T.B. Structure of Metals (1980), Pergamon Oxford p. 204
16. Bender B.A., and Pan M.J. Mater. Sci. Eng. B 117 (2005) 339-347
17. Yang C.F. Jpn. J. Appl. Phys. 36 (1997) 188-193
18. Fang L., and Shen M. Thin Solid Films 440 (2003) 60-65
19. Yang C.F. Jpn. J. Appl. Phys. 35 (1996) 1806-1813
20. Fang T.T., Mei L.T., and Ho H.F. Acta Mater. 54 (2006) 2867
21. Liu L., Fan H., Chen X., and Fang P. J. Alloys Compd. 469 (2009) 529-534
22. Sinclair D.C., Adams T.B., Morrison F.D., and West A.R. Appl. Phys. Lett. 80 (2002) 2153-2155
23. Homes C.C., Vogt T., Shapiro S.M., Wakimoto S., and Ramirez A.P. Science 293 (2001) 673-676
24. Daniel V.V. Dielectric Relaxation (1967), Academic Press, New York
25. Brize V., Gruener G., Wolfman J., Fatyeyeva K., Tabellout M., Gervais M., and Gervais F. Mater. Sci. Eng. B 129 (2006) 135-138
26. Aygun S., Tan X., Maria J.P., and Cann D. J. Electroceram. 15 (2005) 203-208
27. Fang L., Shen M., and Cao W. J. Appl. Phys. 95 (2004) 6483-6485
28. Fang L., Shen M., Yang J., and Li Z. J. Phys. D 38 (2005) 4236-4240
29. Prosandeyev S.A., Fisenko A.V., Riabchinski A.I., Osipenko I.A., Raevski I.P., and Safontseva N. J. Phys. Condens. Matter 8 (1996) 6705-6717
30. Li J., Cho K., Wu N., and Ignatiev A. IEEE Trans. Dielectr. Electr. Insul. 11 (2004) 534-541
31. Raevski I.P., Prosandeyev S.A., Bogatin A.S., Malitskaya M.A., and Jastrabik L. J. Appl. Phys. 93 (2003) 4130-4136