Correlation between dielectric properties and sintering temperatures of polycrystalline CaCu3Ti4O12

IEEE Transactions on Dielectrics and Electrical Insulation

Volumn 11, Issue 3, 2004, Pages 534-541

  Li, Jianren ^a   Cho, Kyuho ^a   Wu, Naijuan ^a   Ignatiev, Alex ^a  

^a UNIVERSITY OF HOUSTON   (United States)

Author keywords

CaCu3Ti4O12; CCTO; Dielectric constant; Grain boundary; Grain volume; Oxygen vacancy; Polycrystalline; Sintering temperature

Indexed keywords

GRAIN VOLUME; MATERIALS PROCESSING; MINIATURIZATION; PELLETS;

ANTIFERROMAGNETISM; CAPACITANCE; ELECTRIC IMPEDANCE; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; IONIZATION; MORPHOLOGY; PARAMETER ESTIMATION; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; SINTERING; SUPERCONDUCTING DEVICES;

CALCIUM COMPOUNDS;

EID: 3142724654     PISSN: 10709878     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDEI.2004.1306731     Document Type: Article

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