Effects of Cu stoichiometry on the microstructures, barrier-layer structures, electrical conduction, dielectric responses, and stability of CaCu3Ti4O12

Acta Materialia

Volumn 54, Issue 10, 2006, Pages 2867-2875

  Fang, Tsang Tse ^a   Mei, Li Then ^a   Ho, Hei Fong ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHANG JUNG CHRISTIAN UNIVERSITY   (Taiwan)

Author keywords

Defects; Dielectric; Electrical properties; Electroceramics; Microstructure

Indexed keywords

COPPER; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; MATHEMATICAL MODELS; MICROSTRUCTURE; PERMITTIVITY; POLARONS; STOICHIOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

BRICK-LAYER MODEL; ELECTROCERAMICS; ELECTRON HOPPING;

COPPER COMPOUNDS;

EID: 33747461056     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2006.02.037     Document Type: Article

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