Influence of the defect density (twins boundaries) on electrical parameters of 3C-SiC epitaxial films

Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4758-4760

  Lebedev, Alexander A ^a   Abramov, Pavel L ^a   Lebedev, Sergey P ^a   Oganesyan, Gagik A ^a   Tregubova, Alla S ^a   Shamshur, Dmitrii V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

3C SiC; Magnetoresistance; Mobility; Twins; X ray

Indexed keywords

3C-SIC; 4H-SIC SUBSTRATE; DOPING LEVELS; ELECTRICAL PARAMETER; LOW-TEMPERATURE CONDUCTIVITY; SIC SUBSTRATES; STRUCTURAL PERFECTION; SUBLIMATION EPITAXY; TRANSITION REGIONS;

CRYSTAL GROWTH; DEFECT DENSITY; ELECTRIC RESISTANCE; EPITAXIAL FILMS; EPITAXIAL LAYERS; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; OPTICAL ENGINEERING; SILICON CARBIDE; SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 74449088872     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.183     Document Type: Article

References (6)

1. Lebedev A.A., Strel'chuk A.M., Savkina N.S., Bogdanova E.V., Tregubova A.S., Kuznetsov A.N., and Davydov D.V. Material Science Forum 433-466 (2003) 427
2. Lebedev A.A., Abramov P.L., Agrinskaya N.V., Kozub V.I., Lebedev S.P., Oganesyan G.A., Sorokin L.M., Tregubova A.S., Shamshur D.V., and Skvortsova M.O. Journal of Applied Physics 105 (2009) 023706
3. Lebedev A.A., Zelenin V.V., Abramov P.L., Bogdanova E.V., Lebedev S.P., Abramov P.L., Nel'son D.K., Razbirin B.S., Scheglov M.P., Tregubova A.S., Suvajarvi M., and Yakimova R. Semiconductors 41 (2007) 263
4. Lebedev A.A. Semiconductor Science and Technology 21 (2006) R17
5. Shmidt N.M. In: Levinshtien M.E., and Shur M.S. (Eds). Semiconductor Technology (Processing and Novel Fabrication Techniques) (1997), Wiley, New York 1-17
6. Latu-Romain L., Chaussende D., Balloud C., Juillaquet S., Rapenne L., Pernot E., Camassel J., Pons M., and Madar R. Material Science Forum 527-529 (2006) 99