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Volumn 87, Issue 3, 2010, Pages 398-401

In situ X-ray diffraction study of self-forming barriers from a Cu-Mn alloy in 100 nm Cu/low-k damascene interconnects using synchrotron radiation

Author keywords

Damascene; In situ; Low k; Manganese; Oxidation; Self forming barrier; Stress; Synchrotron; Texture; X ray diffraction

Indexed keywords

ANNEAL TEMPERATURES; BARRIER FORMATION; BARRIER SYSTEMS; CU LINES; DAMASCENE; DAMASCENE INTERCONNECTS; DAMASCENE LINES; DIFFRACTION PEAKS; ENHANCED DIFFUSION; FORMATION PROCESS; IN SITU; IN-PLANE; IN-SITU STUDY; ION EXCITATION; LOW-K; METAL OXIDATION; MN CONCENTRATIONS; PEAK SHIFT; SELF-FORMING BARRIER;

EID: 74449087615     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.06.023     Document Type: Article
Times cited : (13)

References (24)
  • 23
    • 74449093797 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors (itrs.net, 2007).
    • International Technology Roadmap for Semiconductors (itrs.net, 2007).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.