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Volumn 87, Issue 3, 2010, Pages 337-342
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Analysis of the impact of different additives during etch processes of dense and porous low-k with OES and QMS
a
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Author keywords
Dense SiCOH; Fluorocarbon plasma; Optical emission spectroscopy; Plasma diagnostics; Porous SiCOH; Quadrupole mass spectrometry; Reactive ion etching; Sidewall damage
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Indexed keywords
DENSE SICOH;
ETCH PROCESS;
ETCH RATES;
FLUOROCARBON PLASMA;
FTIR;
GEOMETRICAL PARAMETERS;
IN-SITU;
ION COMPOSITION;
MATERIAL PROPERTY;
PLASMA CONDITIONS;
PLASMA DAMAGE;
PLASMA ETCH PROCESS;
POROUS LOW-K;
QUADRUPOLE MASS SPECTROMETRY;
SEM;
SI-C-N FILMS;
SIDEWALL DAMAGE;
SPECTRAL ELLIPSOMETRY;
SPUTTER YIELDS;
SURFACE CONDITIONS;
TRENCH SIDEWALLS;
ADDITIVES;
ANGLE MEASUREMENT;
ARGON;
CONTACT ANGLE;
ELLIPSOMETRY;
EMISSION SPECTROSCOPY;
FLUORINE;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
GEOMETRY;
IONS;
LIGHT EMISSION;
LIGHT REFRACTION;
MASS SPECTROMETERS;
MASS SPECTROMETRY;
OPTICAL EMISSION SPECTROSCOPY;
ORGANIC POLYMERS;
PHOTORESISTS;
PLASMA PROBES;
PLASMAS;
POLYMER FILMS;
REACTIVE ION ETCHING;
REFRACTIVE INDEX;
REFRACTOMETERS;
SPUTTERING;
PLASMA DIAGNOSTICS;
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EID: 74449083810
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2009.08.004 Document Type: Article |
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Times cited : (20)
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References (10)
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