Gate current calculations using spherical harmonic expansion of Boltzmann equation

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2009, Pages

  Jin, Seonghoon ^a   Wettstein, Andreas ^b   Choi, Woosung ^a   Bufler, Fabian M ^b,c   Lyumkis, Eugeny ^a  

^a SYNOPSYS INC   (United States)

^b SYNOPSYS SWITZERLAND LLC   (Switzerland)

^c ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE EFFECTS; GATE CURRENT; IMAGE-POTENTIAL; INJECTION CURRENTS; MICROSCOPIC SCATTERING; MOMENTUM CONSERVATIONS; MONTE CARLO SIMULATION; NON-EQUILIBRIUM ELECTRONS; PHYSICS-BASED; SPHERICAL HARMONICS;

BOLTZMANN EQUATION; COMPUTER SIMULATION; HARMONIC ANALYSIS; MONTE CARLO METHODS; SEMICONDUCTOR JUNCTIONS; THERMIONIC EMISSION;

DISTRIBUTION FUNCTIONS;

EID: 74349119328     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2009.5290216     Document Type: Conference Paper

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