Morfological and structural characteristics of II-VI semiconductor thin films (ZnTe, CdTe, ZnS)

Integrated Ferroelectrics

Volumn 103, Issue 1 PART 2, 2008, Pages 32-40

  Kurbatov, D ^a   Kosyak, V ^a   Kolesnyk, M ^a   Opanasyuk, A ^a   Danilchenko, S ^b  

^a SUMY STATE UNIVERSITY   (Ukraine)

^b INSTITUTE OF APPLIED PHYSICS   (Ukraine)

Author keywords

closed space sublimation (CSS); crystal structure; II VI semiconductor compounds; lattice defects; thin films; x ray diffraction (XRD)

Indexed keywords

CDTE; CLOSE SPACED SUBLIMATION; CLOSED SPACE SUBLIMATION; COHERENT SCATTERING REGION; DEFECT CONCENTRATIONS; II-VI SEMICONDUCTOR; LATTICE DEFECTS; LATTICE MICROSTRAIN; MICROSTRUCTURAL CHARACTERISTICS; PREPARATION CONDITIONS; SEM; STRUCTURAL CHARACTERISTICS; STRUCTURAL FEATURE; X-RAY DIFFRACTION LINE BROADENING; XRD; ZNS THIN FILMS;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; COHERENT SCATTERING; DEFECTS; DIFFRACTION; FILM PREPARATION; FUNCTIONAL MATERIALS; GROUND STATE; NANOTECHNOLOGY; OPTICAL MICROSCOPY; SEMICONDUCTOR MATERIALS; SUBLIMATION; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAYS; ZINC SULFIDE;

CRYSTAL STRUCTURE;

EID: 74349114542     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580802558126     Document Type: Conference Paper

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