The study of the influence of uniaxial stress on impurity complexes in silicon

Applied Surface Science

Volumn 240, Issue 1-4, 2005, Pages 146-154

  Tessema, G ^a,b   Vianden, R ^a  

^a UNIVERSITY OF BONN   (Germany)

^b ADDIS ABABA UNIVERSITY   (Ethiopia)

Author keywords

Hyperfine interaction; Impurity defects; Silicon; Uniaxial stress

Indexed keywords

ANNEALING; BARIUM COMPOUNDS; COMPLEXATION; DISSOCIATION; ELASTICITY; ELECTRIC FIELDS; HEAT TREATMENT; IMPURITIES; PHOSPHORUS; RELAXATION PROCESSES; SILICON; STRAIN; STRESSES; TENSORS;

ELECTRIC FIELD GRADIENTS (EFG); HYPERFINE INTERACTIONS; IMPURITY DEFECTS; UNIAXIAL STRESSES;

SURFACE CHEMISTRY;

EID: 10444240248     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.06.117     Document Type: Article

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