Effect of H2O evolving from TEOS based SiO2 film on the EEPROM cell characteristic

Microelectronic Engineering

Volumn 83, Issue 10, 2006, Pages 2001-2003

  Lee, Junghwan ^a   Chung, Eunyoung ^a   Moon, Won ^a   Suh, Dong Hack ^b  

^a System IC R and D   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

Cell Vt; EEPROM; SiO2

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; THIN FILMS; THRESHOLD VOLTAGE; WATER; PRESSURE EFFECTS; PROM; TRANSISTORS;

CELL TRANSISTOR; CELL VT; ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM) CELL; SIO2; TEOS BASED SILICATE FILMS; VOLTAGE MARGIN; CELL TRANSISTORS; ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM); FILM DEPOSITION; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SILICA; SEMICONDUCTING SILICON COMPOUNDS;

EID: 33745142580     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.03.003     Document Type: Article

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