Formation of Ge3N4/Ge structures using nitrogen radicals and their thermal stability

ECS Transactions

Volumn 16, Issue 10, 2009, Pages 717-721

  Kondo, H ^a   Oda, S ^a   Ogawa, M ^a   Zaima, S ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; DECOMPOSITION; GERMANIUM COMPOUNDS; NITRIDATION; NITROGEN; SI-GE ALLOYS; SUBSTRATES; SURFACE ROUGHNESS; THERMODYNAMIC STABILITY;

ISLAND STRUCTURE; LAYER BY LAYER; NITRIDATION TIME; NITROGEN RADICAL; PLASMA CONDITIONS; ROOT MEAN SQUARE; SUBSTRATE TEMPERATURE; SURFACE-ROUGHENING;

NITROGEN COMPOUNDS;

EID: 63149166453     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2986828     Document Type: Conference Paper

References (7)

1. K. C. Saraswat, C. O. Chui, T. Krishnamohan, A. Nayfeh, and P. McInt yre, Microelec. Eng., 80, 15 (2005).
2. M. Houssa, B. De Jaeger, A. Delabie, S. Van Elshocht, V. V. Afanas'ev, J. L. Autran, A. Stesmans, M. Meuris, and M. M. Heyns, J. Non-Crystalline Sol., 351, 1902 (2005).
3. J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthamma-nurak, D. T. Danielson, J. Michel, and L. C. Kimerling, Appl. Phys. Lett., 87, 011110 (2005).
4. H. Kondo, I. Yanagi, M. Sakashita, A. Sakai, M. Ogawa, and S. Zaima, Abstracts of 210th Meeting of The Electrochemical Society, (2006).
5. T. Maeda, T. Yasuda, M. Nishizawa, N. Miyata, Y. Morita, and S. Takagi, Appl. Phys. Lett., 85, 3181 (2004).
6. H. Kondo, M. Fujita, A. Sakai, M. Ogawa, and S. Zaima, Ext. Abst. of 2008 International Conference on Solid State Devices and Materials, 1036 (2007).
7. K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, and H. Watanabe, Jpn. J. Appl. Phys. 47 (4), 2415 (2008).