Integration of interdigital-gated plasma wave device for proximity communication system application

Microelectronics Journal

Volumn 38, Issue 12, 2007, Pages 1263-1267

  Hashim, Abdul Manaf ^a   Kasai, Seiya ^b   Hashizume, Tamotsu ^b   Hasegawa, Hideki ^b  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

GaAs; HEMT; Interdigital; Negative conductance; Plasma wave; Terahertz

Indexed keywords

COMMUNICATION SYSTEMS; ELECTROMAGNETIC WAVES; GALLIUM; SWITCHING;

CARRIER DRIFT VELOCITY; DRAIN-SOURCE VOLTAGE; INTERDIGITAL-GATED PLASMA WAVE DEVICE; NEGATIVE CONDUCTANCE; PROXIMITY COMMUNICATION SYSTEM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 36348984995     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.09.028     Document Type: Article

References (8)

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