Design and fabrication of Schottky diode, on-chip RF power detector

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 2089-2093

  Jeon, Woochul ^a   Firestone, Todd M ^a   Rodgers, John C ^a   Melngailis, John ^a  

^a The Institute for Research in Electronics and Applied Physics   (United States)

Author keywords

CMOS; FIB; RF power detector; Schottky diode

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEPOSITION; IRRADIATION; MICROPROCESSOR CHIPS; MICROWAVES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH;

FOCUSED ION BEAMS (FIB); JUNCTION RESISTANCE; RF POWER DETECTOR; SCHOTTKY DIODES;

SCHOTTKY BARRIER DIODES;

EID: 3142659788     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.066     Document Type: Conference Paper

References (8)

1. Abrams M. The dawn of the E-Bomb. IEEE Spectrum. 40(11):2003;24-30.
2. Sharma B.L. Metal-semiconductor Schottky barrier junctions and their applications. 1984;Plenum Press, New York and London.
3. Luy J.F., Strohm K.M., Buechier J., Russer P. Silicon monolithic millimeter-wave integrated circuits. IEE Proc. 139(3):1992;209-216.
4. Milanovic V., Gaitan M., Marshall J.C., Zaghloul M.E. CMOS foundry implementation of Schottky diodes for RF detection. IEEE Trans. Electron Dev. 43(12):1996;2210-2214.
5. Rivera B, Baker RJ, Melngailis J. Design and layout of Schottky diodes in a standard CMOS process. Int Semicond Dev Res Symp. Washington DC: December 2001. p. 79-82.
6. Morschbach M, Schollhorn C, Oehme M, Kasper E. RF-Schottky diodes with Ni silicide for mixer applications. Silicon monolithic integrated circuits in RF systems. Grainau, Germany: April 2003. p. 122-5.
7. DeMarco A.J., Melngailis J. Contact resistance of focused ion beam deposited platinum and tungsten films to silicon. J. Vac. Sci. Technol. B. 19(6):2001;2543-2546.
8. Giri DV, Senior, Tesche FM. Classification of intentional electromagnetic interface (IEMI). IEEE Tran EMC. Special issue number B-1, Currently under review.