Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier

Microelectronics Journal

Volumn 38, Issue 12, 2007, Pages 1268-1272

  Manaf Hashim, Abdul ^a   Kasai, Seiya ^b   Iizuka, Kouichi ^c   Hashizume, Tamotsu ^b   Hasegawa, Hideki ^b  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^b HOKKAIDO UNIVERSITY   (Japan)

^c Employment Promotion Project Corporation   (Japan)

Author keywords

HEMT; Interdigital; Negative conductance; Plasma wave; Terahertz

Indexed keywords

DRAIN CURRENT; ELECTRIC CONDUCTANCE; MICROWAVE ACOUSTIC DEVICES; PLASMA WAVES; SEMICONDUCTING GALLIUM ARSENIDE; SOLID STATE DEVICES;

INTERDIGITAL GATES; NEGATIVE CONDUCTANCE; SOLID-STATE AMPLIFIERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 36348975818     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.09.027     Document Type: Article

References (4)

1. Hashim A.M., Hashizume T., Iizuka K., and Hasegawa H. Plasma wave interactions in the microwave to THz range between carriers in a semiconductor 2DEG and interdigital slow waves. Superlattices Microstruct. 34 (2003) 531-537
2. Iizuka K., Hashim A.M., and Hasegawa H. Surface plasma wave interactions between semiconductor and electromagnetic space harmonics from microwave to THz range. Thin Solid Films 464-465 (2004) 464-468
3. Hashim A.M., Kasai S., Hashizume T., and Hasegawa H. Large modulation of conductance in interdigital-gated HEMT devices due to surface plasma wave interactions. Jpn. J. Appl. Phys. 44 (2005) 2729-2734
4. A.M. Hashim, Plasma waves in semiconductors and their interactions with electromagnetic waves up to terahertz region, Ph.D. Thesis, Hokkaido University, 2006.