Control of growth orientation and shape for epitaxially grown In2O3 nanowires on a-plane sapphire

Materials Research Bulletin

Volumn 45, Issue 2, 2010, Pages 230-234

  Chen, Ching Jong ^a   Chern, Ming Yau ^a   Wu, Chien Ting ^a   Chen, Cheng Hsuan ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

A. Nanostructures; C. Electron microscopy; C. X ray diffraction; D. Crystal structure

Indexed keywords

A-PLANE SAPPHIRE; A. NANOSTRUCTURES; AU CATALYSTS; C. X-RAY DIFFRACTION; CATALYST-ASSISTED CARBOTHERMAL REDUCTION; D. CRYSTAL STRUCTURE; EPITAXIALLY GROWN; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GROWTH CONDITIONS; GROWTH ORIENTATIONS; INDIUM OXIDE NANOWIRES; SQUARE CROSS-SECTION; TEMPERATURE EFFECTS; VAPOR-LIQUID-SOLID; VAPOR-SOLID GROWTH MECHANISM; VERTICALLY ALIGNED;

CARBOTHERMAL REDUCTION; CATALYSIS; CATALYSTS; DIFFRACTION; ELECTRONS; INDIUM; NANOWIRES; ORE TREATMENT; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

CRYSTAL STRUCTURE;

EID: 73449100095     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2009.08.011     Document Type: Article

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