Comparison of Si and GaAs/interfaces resulting from thermal and plasma oxidation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 4, 1997, Pages 1173-1181

  Lefebvre, P R ^a   Irene, E A ^a  

^a University of North Carolina at Chapel Hill   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346534387     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589434     Document Type: Article

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