Millimeter-wave CMOS device modeling and simulation

Proceedings - IEEE International Symposium on Circuits and Systems

Volumn 5, Issue , 2004, Pages

  Doan, Chinh H ^a   Emami, Sohrab ^a   Niknejad, Ali M ^a   Brodersen, Robert W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE RESISTANCES; MILLIMETER-WAVE TRANSISTORS; MULTILAYER DIELECTRICS;

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC RESISTANCE; MATHEMATICAL MODELS; MILLIMETER WAVE DEVICES; RESONANT CIRCUITS; TRANSISTORS; TRANSMISSION LINE THEORY;

CMOS INTEGRATED CIRCUITS;

EID: 4344705156     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. H. Wang, " A 50GHz VCO in 0.25μm CMOS," in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2001, pp. 372-373.
2. M. Tiebout, H.-D. Wohlmuth, and W. Simbürger, " A 1V 51GHz fully-integrated VCO in 0.12μm CMOS," in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2002, pp. 238-239.
3. C. Enz and Y. Cheng, " MOS transistor modeling for RF IC design," IEEE J. Solid-State Circuits, vol. 35, pp. 186-201, Feb. 2000.