Educational tool for teaching of semiconductors

2009 13th European Conference on Power Electronics and Applications, EPE '09

Volumn , Issue , 2009, Pages

  Santos, Rogério ^a   Chibante, Rui ^a   Araújo, Armando ^b   Carvalho, Adriano ^b  

^a INSTITUTO SUPERIOR DE ENGENHARIA DO PORTO   (Portugal)

^b UNIVERSITY OF PORTO   (Portugal)

Author keywords

Device modelling; Educational tool; IGBT; Semiconductor device; Simulation

Indexed keywords

CIRCUIT DYNAMICS; CIRCUIT PARAMETER; DEVICE MODELLING; DEVICE PARAMETERS; DISTRIBUTION CURVES; DOPING CONCENTRATION; DYNAMIC CHARGES; EDUCATIONAL TOOLS; ELECTRICAL CIRCUIT; HIGH QUALITY; PHYSICS-BASED MODELS; POWER CIRCUIT; SEMICONDUCTOR BEHAVIOR; SEMICONDUCTOR DEVICE SIMULATION; SEMICONDUCTOR THEORY; STATE OF THE ART; SWITCHING PARAMETERS; SWITCHING WAVEFORMS; WAVE FORMS;

ACTIVE FILTERS; CARRIER CONCENTRATION; CIRCUIT SIMULATION; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); PHOTOLITHOGRAPHY; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR SWITCHES; TEACHING; THREE DIMENSIONAL;

SIMULATORS;

EID: 72949094279     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

1. Y. T. Yeow and C. H. Ling, Teaching semiconductor device physics with two-dimensional numerical solver, IEEE Transactions on Education, Vol. 42, no. 1, pp. 50-58, 1999.
2. J. Zácek, Simulation of power semiconductor systems as an educational tool, Microelectronics Journal, Vol. 27, no. 2-3, pp. 149-159, 1996.
3. A. Araújo, A. Carvalho, and J. L. M. d. Carvalho, A New Approach for Analogue Simulation of Bipolar Semiconductors, Proceedings of the 2nd Brazilian Conference Power Electronics (COBEP'97), pp. 761-765, Belo-Horizonte, Brasil, 1997.
4. A. Araújo, A. Carvalho, and J. L. M. Carvalho, Power P-I-N diode modeling using SPICE, Proceedings of the IEEE International Symposium on Industrial Electronics, Vol. 2, pp. 211-216, Guimarães, 1997.
5. R. Chibante, A. Araujo, and A. Carvalho, Finite Element Power Diode Model Optimized Through Experiment Based Parameter Extraction, International Journal of Numerical Modeling: Electronic Networks, Devices and Fields, no., 2008 (DOI: 10.1002/jnm).
6. R. Chibante, A. Araujo, and A. Carvalho, A new approach for physical-based modelling of bipolar power semiconductor devices, Solid-State Electronics, Vol. 52, no. 11, pp. 1766-1772, 2008.
7. R. Chibante, A. Araújo, and A. Carvalho, A new physics based SPICE model for NPT IGBTs, Proceedings of the 29th Conference of the IEEE Industrial Electronics Society, pp. 1156-1161, Roanoke, US, 2003.
8. R. Chibante, A. Araújo, and A. Carvalho, A new physics based SPICE subcircuit model for insulated gate bipolar transistors (IGBTs), Proceedings of 10th European Conference on Power Electronics and Applications (EPE'03), Toulouse, France, 2003.
9. R. Chibante, A. Araújo, and A. Carvalho, Modeling Buffer Layer IGBTs with an Efficient Parameter Extraction Method, Proceedings of 36th Annual IEEE Power Electronics Specialists Conference (PESC'05), pp. 2194-2200, Recife, Brasil, 2005.
10. P. R. Palmer, et al., Circuit simulator models for the diode and IGBT with full temperature dependent features, IEEE Transactions on Power Electronics, Vol. 18, no. 5, pp. 1220-1229, 2003.
11. W. B. Bickford, A first course in the finite element method: Richard D. Irwin, 1990.
12. J.-L. Massol, Répresentation des phénomènes de diffusion dans la modélisation des composants bipolaires de puissance. Application a la simulation du recouvrement inverse de la diode., in INSA de Toulouse. Toulouse, France, 1993.
13. A. Araújo and A. Carvalho, SPICE implementation of a FEM based model for bipolar power semiconductors, Proceedings of 10th European Conference on Power Electronics and Applications (EPE'03), Toulouse, France, 2003.